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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3455
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3455 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3455 PACKAGE Isolated TO-220
FEATURES
*Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A) *Gate voltage rating 30 V *Low on-state resistance RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 6.0 A) *Avalanche capability ratings *Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (Pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
500 30 12 36 2.0 50 150 -55 to +150 12 103
V V A A W W C C A mJ
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2
IAS EAS
Note2
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14757EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan
(c)
2000
2SK3455
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 400 V VGS = 10 V ID = 12 A IF = 12 A, VGS = 0 V IF = 12 A, VGS = 0 V di/dt = 50 A/ s TEST CONDITIONS VDS = 500 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 6.0 A VGS = 10 V, ID = 6.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 6.0 A VGS = 10 V RG = 10 2.5 2.0 0.50 1620 250 10 24 18 50 15 30 9 11 1.0 1.5 11 0.60 MIN. TYP. MAX. 100 100 3.5 UNIT
A
nA V S pF pF pF ns ns ns ns nC nC nC V
s C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD ID
90% 90% ID
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
ID
Wave Form
0
10% td(on) ton tr td(off) toff
10% tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D14757EJ1V0DS
2SK3455
TYPICAL CHARACTERISTICS (TA = 25C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 35 100 FORWARD TRANSFER CHARACTERISTICS
Pulsed
30
VGS = 20 V 10 10 V
ID - Drain Current - A
25 20 15 10 5 0 0 10 20
ID - Drain Current - A
1
0.1
TA = 150C 125C 75C 25C -25C -50C
0.01 VDS = 10 V Pulsed 0 5 10 15 VGS - Gate to Source Voltage - V
30
40
0.001
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
|yfs| - Forward Transfer Admittance - S
4.0
100
VDS = 10 V ID = 1 mA
VDS = 10 V Pulsed
3.0
10
TA = -50C -25C 25C 75C 125C 150C
2.0
1
1.0
0.1
0 -50
0
50
100
150
0.01 0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.5 Pulsed 1.2 VGS = 10 V 20 V
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15
Pulsed
0.9
ID = 12 A 6.0 A 2.4 A
0.6
0.3
20
0 0.1
1
10
100
VGS - Gate to Source Voltage - V
ID - Drain Current - A
Data Sheet D14757EJ1V0DS
3
2SK3455
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 0 50 VGS = 10 V Pulsed 100 150 ID = 6.0 A 12 A
ISD - Diode Forward Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10 VGS = 10 V 1 0V
0.1
0.01
Pulsed 0 0.5 1.0 1.5 VSD - Source to Drain Voltage - V
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
1000
Ciss
100
tf td(off) td(on)
100 Coss 10
10 tr 1 VDD = 150 V VGS = 10 V RG = 10 0.1 0.1 1 10 100
1 VGS = 0 V f = 1 MHz 1 10 100 VDS - Drain to Source Voltage - V Crss 1000
0.1 0.1
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000 di/dt = 50 A/ s VGS = 0 V 600
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 VDD = 400 V 250 V 125 V 400 VGS 10 8 6 200 VDS 0 ID = 12 A 0 5 10 15 20 25 30 4 2 0 35
VDS - Drain to Source Voltage - V
1000
100
10
1 0.1
1
10
100
ID - Drain Current - A
QG - Gate Charge - nC
4
Data Sheet D14757EJ1V0DS
VGS - Gate to Source Voltage - V
trr - Reverse Recovery Time - ns
2SK3455
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160
100 90 80 70 60 50 40 30 20 10 0
60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
ID(pulse) P W
ID - Drain Current - A
ID(DC)
10 0 1 m s
=
10
RD
) on S(
d ite Lim
s
10
s
1
3 ms 10 ms 30 ms 100 ms Power Dissipation Limited
0.1 1
TC = 25C Single Pulse 10 100 1000 VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100 10
Rth(ch-A) = 62.5C/W
Rth(ch-C) = 2.5C/W 1 0.1 0.01 0.001 10
Single Pulse
100
1m
10 m 100 m 1 PW - Pulse Width - s
Data Sheet D14757EJ1V0DS
10
100
1000
5
2SK3455
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 120
Energy Derating Factor - %
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 150 V RG = 25 VGS = 20 0 V IAS 12 A
IAS - Single Avalanche Current - A
100 80 60 40 20 0 25
IAS = 12 A 10
EAS
=1
03
mJ
1 VDD = 150 V VGS = 20 0 V RG = 25 Starting Tch = 25C 0.1 0.01 0.1
1
10
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D14757EJ1V0DS
2SK3455
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
10.00.3
3.20.2
4.50.2 2.70.2
15.00.3
30.1 40.2
13.5 MIN.
12.00.2
EQUIVALENT CIRCUIT
Drain
0.70.1 2.54 TYP.
1.30.2 1.50.2 2.54 TYP.
2.50.1 0.650.1
Gate Body Diode
1.Gate 2.Drain 3.Source 123
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Data Sheet D14757EJ1V0DS
7
2SK3455
* The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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